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AlGaN/GaN based MOSHFETs with different gate dielectrics and treatments
Publication:
AlGaN/GaN based MOSHFETs with different gate dielectrics and treatments
Date
2002
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mistele, D.
;
Rotter, T.
;
Bougrioua, Z.
;
Moerman, Ingrid
;
Röver, K.S.
;
Seyboth, M.
;
Schwegler, V.
;
Stemmer, J.
;
Fedler, F.
;
Klausing, H.
;
Semchinova, O.K.
;
Aderhold, J.
;
Graul, J.
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1949
since deposited on 2021-10-14
1
last week
Acq. date: 2025-10-28
Citations
Metrics
Views
1949
since deposited on 2021-10-14
1
last week
Acq. date: 2025-10-28
Citations