Publication:
AlGaN/GaN based MOSHFETs with different gate dielectrics and treatments
Date
| dc.contributor.author | Mistele, D. | |
| dc.contributor.author | Rotter, T. | |
| dc.contributor.author | Bougrioua, Z. | |
| dc.contributor.author | Moerman, Ingrid | |
| dc.contributor.author | Röver, K.S. | |
| dc.contributor.author | Seyboth, M. | |
| dc.contributor.author | Schwegler, V. | |
| dc.contributor.author | Stemmer, J. | |
| dc.contributor.author | Fedler, F. | |
| dc.contributor.author | Klausing, H. | |
| dc.contributor.author | Semchinova, O.K. | |
| dc.contributor.author | Aderhold, J. | |
| dc.contributor.author | Graul, J. | |
| dc.contributor.imecauthor | Moerman, Ingrid | |
| dc.contributor.orcidimec | Moerman, Ingrid::0000-0003-2377-3674 | |
| dc.date.accessioned | 2021-10-14T22:26:00Z | |
| dc.date.available | 2021-10-14T22:26:00Z | |
| dc.date.issued | 2002 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/6612 | |
| dc.source.beginpage | I6.51 | |
| dc.source.conference | GaN and Related Alloys 2001 | |
| dc.source.conferencedate | 26/11/2002 | |
| dc.source.conferencelocation | Boston, MA USA | |
| dc.title | AlGaN/GaN based MOSHFETs with different gate dielectrics and treatments | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| Files | ||
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