Browsing by author "Bhuva, B.L."
Now showing items 1-3 of 3
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Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs
Mahatme, N.; Zhang, E.; Reed, R.A.; Bhuva, B.L.; Schrimpf, R.D.; Fleetwood, D.M.; Linten, Dimitri; Simoen, Eddy; Griffoni, Alessio; Aoulaiche, Marc; Jurczak, Gosia; Groeseneken, Guido (2012) -
Total ionizing dose effects on ultra thin buried oxide floating body memories
Mahatme, Nihaar; Schrimpf, Ronald; Reed, Robert; Bhuva, B.L.; Griffoni, Alessio; Simoen, Eddy; Aoulaiche, Marc; Linten, Dimitri; Jurczak, Gosia; Groeseneken, Guido (2012-04) -
Total-ionizing-dose effects on ultrathin-body-and-buried- oxide MOSFETs
Mahatme, Nihaar; Zhang, E.X.; Linten, Dimitri; Griffoni, A.; Aoulaiche, Marc; Simoen, Eddy; Jurczak, Gosia; Bhuva, B.L.; Reed, R.A.; Schrimpf, R.D.; Fleetwood, D.M.; Groeseneken, Guido (2012)