Browsing by author "Afanas'ev, Valeri V."
Now showing items 1-6 of 6
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Analysis of transferred MoS2 layers grown by MOCVD: evidence of Mo vacancy related defect formation
Schoenaers, Ben; Leonhardt, Alessandra; Nalin Mehta, Ankit; Stesmans, Andre; Chiappe, Daniele; Asselberghs, Inge; Radu, Iuliana; Huyghebaert, Cedric; De Gendt, Stefan; Houssa, Michel; Afanas'ev, Valeri V. (2020) -
Capacitive Memory Window With Non-Destructive Read in Ferroelectric Capacitors
Mukherjee, Shankha; Bizindavyi, Jasper; Clima, Sergiu; Popovici, Mihaela Ioana; Piao, Xiaoyu; Katcko, Kostantine; Catthoor, Francky; Yu, Shimeng; Afanas'ev, Valeri V.; Van Houdt, Jan (2023) -
Defect profiling in FEFET Si:HfO2 layers
O'Sullivan, Barry; Putcha, Vamsi; Izmailov, Roman; Afanas'ev, Valeri V.; Simoen, Eddy; Jung, Taehwan; Higashi, Yusuke; Degraeve, Robin; Truijen, Brecht; Kaczer, Ben; Ronchi, Nicolo; McMitchell, Sean; Banerjee, Kaustuv; Clima, Sergiu; Breuil, Laurent; Van den Bosch, Geert; Linten, Dimitri; Van Houdt, Jan (2020) -
Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1xGex/SiO2 heterostructures
Somers, P.; Stesmans, Andre; Souriau, Laurent; Afanas'ev, Valeri V. (2012) -
Electron trapping in ferroelectric HfO2
Izmailov, Roman A.; Strand, Jack W.; Larcher, Luca; Shluger, Alexander L.; Afanas'ev, Valeri V.; O'Sullivan, Barry (2021) -
Material-selective doping of 2D TMDC through AlxOy encapsulation
Leonhardt, Alessandra; Chiappe, Daniele; Afanas'ev, Valeri V.; El Kazzi, Salim; Shlyakhov, Ilya; Conard, Thierry; Franquet, Alexis; Huyghebaert, Cedric; De Gendt, Stefan (2019)