Now showing items 1-2 of 2

    • Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks 

      Maldonado, D.; Roldan, J. B.; Roldan, A. M.; Jimenez-Molinos, F.; Hui, F.; Jing, Xu; Wen, C.; Lanza, M.; Shi, Yuanyuan (2020)
    • Standards for the Characterization of Endurance in Resistive Switching Devices 

      Lanza, Mario; Waser, Rainer; Ielmini, Daniele; Yang, J. Joshua; Goux, Ludovic; Sune, Jordi; Kenyon, Anthony Joseph; Mehonic, Adnan; Spiga, Sabina; Rana, Vikas; Wiefels, Stefan; Menzel, Stephan; Valov, Ilia; Villena, Marco A.; Miranda, Enrique; Jing, Xu; Campabadal, Francesca; Gonzalez, Mireia B.; Aguirre, Fernando; Palumbo, Felix; Zhu, Kaichen; Roldan, Juan Bautista; Puglisi, Francesco Maria; Larcher, Luca; Hou, Tuo-Hung; Prodromakis, Themis; Yang, Yuchao; Huang, Peng; Wan, Tianqing; Chai, Yang; Pey, Kin Leong; Raghavan, Nagarajan; Duenas, Salvador; Wang, Tao; Xia, Qiangfei; Pazos, Sebastian (2021)