Browsing by author "Verbiest, T."
Now showing items 1-4 of 4
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Difference in the nonlinear optical response of epitaxial Si on Ge(100) grown from SiH4 at 500°C and from Si3H8 at 350°C due to segregation of Ge
Valev, V.K.; Leys, Frederik; Caymax, Matty; Verbiest, T. (2009) -
Second harmonic generation indicates a better Si/Ge interface quality for higher temperature and with N2 rather than with H2 as the carrier gas
Valev, V.K.; Vanbel, M.K.; Vincent, Benjamin; Moshchalkov, V.V.; Caymax, Matty; Verbiest, T. (2011) -
Si passivation for Ge pMOSFETs: influence of Si precursor during RPCVD growth
Vincent, Benjamin; Loo, Roger; Vandervorst, Wilfried; Brammertz, Guy; Mitard, Jerome; De Jaeger, Brice; Valev, V.; Verbiest, T.; Takeuchi, S.; Zaima, S.; Rip, Jens; Brijs, Bert; Conard, Thierry; Caymax, Matty (2010) -
Tunneling of holes is observed by second-harmonic generation
Vanbel, M.K.; Afanasiev, Valeri; Adelmann, Christoph; Caymax, Matty; Van Elshocht, Sven; Valev, V.K.; Verbiest, T. (2013)