Authors

Valev, V.K.; Vanbel, M.K.; Vincent, Benjamin; Moshchalkov, V.V.; Caymax, Matty; Verbiest, T.

ISSN

0741-3106

Issue

1

Journal

IEEE Electron Device Letters

Volume

32

Title

Second harmonic generation indicates a better Si/Ge interface quality for higher temperature and with N2 rather than with H2 as the carrier gas

Publication type

Journal article

Embargo date

9999-12-31