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Second harmonic generation indicates a better Si/Ge interface quality for higher temperature and with N2 rather than with H2 as the carrier gas

Date

2011
Journal article
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dc.contributor.authorValev, V.K.
dc.contributor.authorVanbel, M.K.
dc.contributor.authorVincent, Benjamin
dc.contributor.authorMoshchalkov, V.V.
dc.contributor.authorCaymax, Matty
dc.contributor.authorVerbiest, T.
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorCaymax, Matty
dc.date.accessioned2021-10-19T20:04:03Z
dc.date.available2021-10-19T20:04:03Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19937
dc.source.beginpage12
dc.source.endpage14
dc.source.issue1
dc.source.journalIEEE Electron Device Letters
dc.source.volume32
dc.title

Second harmonic generation indicates a better Si/Ge interface quality for higher temperature and with N2 rather than with H2 as the carrier gas

dc.typeJournal article
dspace.entity.typePublication
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