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Second harmonic generation indicates a better Si/Ge interface quality for higher temperature and with N2 rather than with H2 as the carrier gas
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Second harmonic generation indicates a better Si/Ge interface quality for higher temperature and with N2 rather than with H2 as the carrier gas
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Date
2011
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Valev, V.K.
;
Vanbel, M.K.
;
Vincent, Benjamin
;
Moshchalkov, V.V.
;
Caymax, Matty
;
Verbiest, T.
Journal
IEEE Electron Device Letters
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1909
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Acq. date: 2025-12-11
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1909
since deposited on 2021-10-19
1
last month
Acq. date: 2025-12-11
Citations