Browsing by author "Degroote, Stefan"
Now showing items 21-40 of 101
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Crystalline Ge3N4 on Ge(111)
Lieten, Ruben; Degroote, Stefan; Kuijk, Maarten; Borghs, Gustaaf (2007) -
Crystalline Ge3N4 on Ge(111)
Lieten, Ruben; Degroote, Stefan; Leys, Maarten; Kuijk, Maarten; Borghs, Gustaaf (2008) -
Epitaxial growth of III-nitrides on silicon substrates
Degroote, Stefan; Leys, Maarten; Cheng, Kai; Sijmus, Bram; Derluyn, Joff; Borghs, Gustaaf; Germain, Marianne (2010) -
Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE
Cheng, Kai; Motsnyi, Vasyl; Leys, Maarten; Degroote, Stefan; Sijmus, Bram; Germain, Marianne; Borghs, Gustaaf (2007) -
Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE
Cheng, Kai; Motsnyi, Vasyl; Leys, Maarten; Degroote, Stefan; Sijmus, Bram; Germain, Marianne; Borghs, Gustaaf (2008) -
Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C
Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2009) -
Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C
Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2010) -
Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN HFETs by Si substrate removal
Visalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Derluyn, Joff; Das, Jo; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf (2010) -
Extended wavelength InGaAs on GaAs hybrid image sensors
John, Joachim; Zimmermann, Lars; Merken, Patrick; Degroote, Stefan; Borghs, Gustaaf; Van Hoof, Chris; Nemeth, Stefan; Colin, Thierry (2003) -
Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors
Zimmermann, Lars; John, Joachim; Degroote, Stefan; Borghs, Gustaaf; Van Hoof, Chris; Nemeth, Stefan (2003) -
Field-effect saccharide sensing using AlGaN/GaN heterostructures and boronic acid based chemical receptors
Schuller, Tim A.; Kuball, Martin; Flower, Stephen E.; James, Tony D.; Fossey, John S.; Marcon, Denis; Das, Jo; Degroote, Stefan; Germain, Marianne; Sarua, Andrei (2011) -
Formation of V-grooves on the (Al,Ga)N surface as means of tensile stress relaxation
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Bender, Hugo; Favia, Paola; Borghs, Gustaaf; Germain, Marianne (2012) -
GaAs on Ge for CMOS
Brammertz, Guy; Caymax, Matty; Heyns, Marc; Meuris, Marc; Mols, Yves; Degroote, Stefan; Leys, Maarten (2007-05) -
GaAs on Ge for CMOS
Brammertz, Guy; Caymax, Matty; Meuris, Marc; Heyns, Marc; Mols, Yves; Degroote, Stefan; Leys, Maarten (2008) -
GaN epitaxy on off-axis Ge(111) substrates by molecular beam epitaxy
Lieten, Ruben; Zhang, Yucheng; Degroote, Stefan; Kuijk, Maarten; Borghs, Gustaaf (2007) -
GaN technology on high-resistivity Si-substrates for high-power-amplifiers
Das, Jo; Derluyn, Joff; Lorenz, Anne; Oprins, Herman; Xiao, Dongping; De Raedt, Walter; Cheng, Kai; Leys, Maarten; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf (2008) -
GaN-on-Si for power conversion
Germain, Marianne; Derluyn, Joff; Van Hove, Marleen; Medjdoub, Farid; Das, Jo; Marcon, Denis; Degroote, Stefan; Cheng, Kai; Leys, Maarten; Visalli, Domenica; Srivastava, Puneet; Geens, Karen; Viaene, John; Sijmus, Bram; Decoutere, Stefaan; Borghs, Gustaaf (2010) -
GaN-on-Si HEMT stress under high electric field condition
Marcon, Denis; Lorenz, Anne; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2008) -
GaN-on-Si HEMT stress under high electric field condition
Marcon, Denis; Lorenz, Anne; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2009) -
GaN-on-Si HEMTs Above 10 W/mm at 2 GHz together with high thermal stability at 325°C
Medjdoub, Farid; Marcon, Denis; Das, Jo; Derluyn, Joff; Cheng, Kai; Degroote, Stefan; Vellas, Nicolas; Gaquière, Christophe; Germain, Marianne; Decoutere, Stefaan (2010)