Browsing by author "Jiang, Sijia"
Now showing items 21-24 of 24
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Strain relaxation in GaN nanopillars
Tseng, Peter; Gonzalez, Mario; Dillemans, Leander; Cheng, Kai; Jiang, Sijia; Vereecken, Philippe; Borghs, Gustaaf; Lieten, Ruben (2012) -
Structural characterization of N-face GaN epilayers grown on Ge (111) by plasma assisted molecular beam epitaxy
Zhang, Liyang; Lieten, Ruben; Zhu, Tongtong; Leys, Maarten; Jiang, Sijia; Borghs, Gustaaf (2013) -
Towards the monolithic integration of III-V compound semiconductors on Si: selective area growth in high aspect ratio structures vs. strain relaxed buffer-mediated epitaxy
Cantoro, Mirco; Merckling, Clement; Jiang, Sijia; Guo, Weiming; Waldron, Niamh; Bender, Hugo; Moussa, Alain; Douhard, Bastien; Vandervorst, Wilfried; Heyns, Marc; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012) -
Vapor phase doping for ultra shallow juntion formation in advanced Si CMOS devices
Shimizu, Yasua; Nguyen, Duy; Jiang, Sijia; Rosseel, Erik; Takeuchi, Shotaro; Everaert, Jean-Luc; Loo, Roger; Vandervorst, Wilfried; Caymax, Matty (2010-01)