Browsing by author "Hsu, Brent"
Now showing items 21-26 of 26
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Observation of the stacking faults in In.53Ga.47As by electron channeling contrast imaging
Hsu, Brent; Han, Han; Simoen, Eddy; Merckling, Clement; Eneman, Geert; Mols, Yves; Collaert, Nadine; Heyns, Marc (2019) -
Polarization control of epitaxial barium titanate (BaTiO3) grown by pulsed-laser deposition on a MBE-SrTiO3/Si(001) pseudo-substrate
Wang, Tsang Hsuan; Hsu, Brent; Korytov, Maxim; Genoe, Jan; Merckling, Clement (2020) -
Single crystalline BaTiO3 grown by pulsed-laser deposition (PLD) on SrTiO3 / Si pseudo-substrate
Wang, Tsang Hsuan; Korytov, Maxim; Hsu, Brent; Genoe, Jan; Merckling, Clement (2020) -
The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As
Hsu, Brent; Simoen, Eddy; Merckling, Clement; Eneman, Geert; Mols, Yves; Han, Han; Alian, AliReza; Collaert, Nadine; Heyns, Marc (2019) -
The revival of compound semiconductors and how they will change the world in a 5G/6G era
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Chauhan, Vikas; ElKashlan, Rana Y.; Hsu, Brent; Ingels, Mark; Vondkar Kodandarama, Komal; Khaled, Ahmad; Kunert, Bernardette; Mols, Yves; Peralagu, Uthayasankaran; Putcha, Vamsi; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Simoen, Eddy; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yadav, Sachin; Yu, Hao; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Waldron, Niamh (2020) -
Trap-Assisted-Tunneling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p-n junctions
Hsu, Brent; Simoen, Eddy; Eneman, Geert; Merckling, Clement; Mols, Yves; Alian, AliReza; Langer, Robert; Collaert, Nadine; Heyns, Marc (2018-06)