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The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As
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The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As
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Date
2019
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hsu, Brent
;
Simoen, Eddy
;
Merckling, Clement
;
Eneman, Geert
;
Mols, Yves
;
Han, Han
;
Alian, AliReza
;
Collaert, Nadine
;
Heyns, Marc
Journal
Journal of Physics D: Applied Physics
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1987
since deposited on 2021-10-27
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Acq. date: 2025-12-16
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Views
1987
since deposited on 2021-10-27
1
last month
Acq. date: 2025-12-16
Citations