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Electrostatic potential perturbation at the polycrystalline Si/HfO2 interface

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.contributor.authorPantisano, Luigi
dc.contributor.authorP. J. Chen,
dc.date.accessioned2021-10-16T00:42:28Z
dc.date.available2021-10-16T00:42:28Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10003
dc.sourceIIOimport
dc.titleElectrostatic potential perturbation at the polycrystalline Si/HfO2 interface
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.source.peerreviewno
dc.source.beginpage72107
dc.source.journalApplied Physics Letters
dc.source.issue7
dc.source.volume86
imec.availabilityPublished - imec


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