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Band alignment at the interface of (100)Si with HfxTa1-xOy high-k dielectric layers

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.contributor.authorZhao, Chao
dc.contributor.authorCaymax, Matty
dc.contributor.authorRittersma, Z.M.
dc.contributor.authorMaes, Jan
dc.date.accessioned2021-10-16T00:42:29Z
dc.date.available2021-10-16T00:42:29Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10004
dc.sourceIIOimport
dc.titleBand alignment at the interface of (100)Si with HfxTa1-xOy high-k dielectric layers
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMaes, Jan
dc.source.peerreviewno
dc.source.beginpage072108-1
dc.source.endpage072108-3
dc.source.journalApplied Physics Letters
dc.source.issue7
dc.source.volume86
imec.availabilityPublished - imec


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