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A manufacturable process to improve thermal stability of 0.25-µm cobalt silicided poly gate

dc.contributor.authorWang, Qingfeng
dc.contributor.authorLauwers, A.
dc.contributor.authorDeweerdt, Bruno
dc.contributor.authorVerbeeck, Rita
dc.contributor.authorLoosen, Fred
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-09-29T13:25:08Z
dc.date.available2021-09-29T13:25:08Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1005
dc.sourceIIOimport
dc.titleA manufacturable process to improve thermal stability of 0.25-µm cobalt silicided poly gate
dc.typeJournal article
dc.contributor.imecauthorDeweerdt, Bruno
dc.contributor.imecauthorVerbeeck, Rita
dc.contributor.imecauthorLoosen, Fred
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.beginpage449
dc.source.endpage451
dc.source.journalIEEE Trans. Semiconductor Manufacturing
dc.source.issue4
dc.source.volume8
imec.availabilityPublished - imec


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