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Articles
A manufacturable process to improve thermal stability of 0.25-µm cobalt silicided poly gate
Publication:
A manufacturable process to improve thermal stability of 0.25-µm cobalt silicided poly gate
Date
1995
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wang, Qingfeng
;
Lauwers, A.
;
Deweerdt, Bruno
;
Verbeeck, Rita
;
Loosen, Fred
;
Maex, Karen
Journal
IEEE Trans. Semiconductor Manufacturing
Abstract
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2006
since deposited on 2021-09-29
Acq. date: 2025-10-24
Citations
Metrics
Views
2006
since deposited on 2021-09-29
Acq. date: 2025-10-24
Citations