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Fluorine-free and fluroine containing MOCVD precursors for electronic oxides

dc.contributor.authorBedoya, C.
dc.contributor.authorCondorelli, G.G.
dc.contributor.authorDi Mauro, A.
dc.contributor.authorAnastasi, G.
dc.contributor.authorFragala, I.L.
dc.contributor.authorLisoni, Judit
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-16T00:44:51Z
dc.date.available2021-10-16T00:44:51Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10075
dc.sourceIIOimport
dc.titleFluorine-free and fluroine containing MOCVD precursors for electronic oxides
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage264
dc.source.endpage269
dc.source.journalMaterials Science and Engineering B
dc.source.issue1_3
dc.source.volume118
imec.availabilityPublished - open access
imec.internalnotesEMRS 2004 Symposium D: Functional Oxides for Advanced Semiconductor Technologies


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