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Electrical characterization of high-dielectric-constant/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscope

dc.contributor.authorBlasco, X.
dc.contributor.authorPorti, M.
dc.contributor.authorNafria, M.
dc.contributor.authorPetry, Jasmine
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-16T00:46:56Z
dc.date.available2021-10-16T00:46:56Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10109
dc.sourceIIOimport
dc.titleElectrical characterization of high-dielectric-constant/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscope
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.beginpage1506
dc.source.endpage1511
dc.source.journalNanotechnology
dc.source.issue9
dc.source.volume16
imec.availabilityPublished - imec


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