Electrical characterization of high-dielectric-constant/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscope
dc.contributor.author | Blasco, X. | |
dc.contributor.author | Porti, M. | |
dc.contributor.author | Nafria, M. | |
dc.contributor.author | Petry, Jasmine | |
dc.contributor.author | Vandervorst, Wilfried | |
dc.date.accessioned | 2021-10-16T00:46:56Z | |
dc.date.available | 2021-10-16T00:46:56Z | |
dc.date.issued | 2005 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/10109 | |
dc.source | IIOimport | |
dc.title | Electrical characterization of high-dielectric-constant/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscope | |
dc.type | Journal article | |
dc.contributor.imecauthor | Vandervorst, Wilfried | |
dc.source.peerreview | no | |
dc.source.beginpage | 1506 | |
dc.source.endpage | 1511 | |
dc.source.journal | Nanotechnology | |
dc.source.issue | 9 | |
dc.source.volume | 16 | |
imec.availability | Published - imec |
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