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Electrical stresses on ultra-thin gate oxide SOI MOSFETs after irradiation

dc.contributor.authorCester, A.
dc.contributor.authorGerardin, S.
dc.contributor.authorPaccagnella, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T00:55:17Z
dc.date.available2021-10-16T00:55:17Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10203
dc.sourceIIOimport
dc.titleElectrical stresses on ultra-thin gate oxide SOI MOSFETs after irradiation
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage2252
dc.source.endpage2258
dc.source.journalIEEE Trans. Nuclear Science
dc.source.issue6 part 1
dc.source.volume52
imec.availabilityPublished - imec
imec.internalnotesPaper from the IEEE Nuclear & Space Radiation Effects Conference - NSREC; July 2005; Seattle, WA, USA


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