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Low-frequency noise performance of HfO2-based gate stacks

dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorPantisano, Luigi
dc.contributor.authorYoung, E.
dc.date.accessioned2021-10-16T00:59:20Z
dc.date.available2021-10-16T00:59:20Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10238
dc.sourceIIOimport
dc.titleLow-frequency noise performance of HfO2-based gate stacks
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.source.peerreviewno
dc.source.beginpageF114
dc.source.endpageF123
dc.source.journalJournal of the Electrochemical Society
dc.source.issue9
dc.source.volume152
imec.availabilityPublished - imec


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