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Plasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics

dc.contributor.authorCubaynes, F.N.
dc.contributor.authorVenezia, V.C.
dc.contributor.authorvan der marel, C.
dc.contributor.authorSnijders, J.H.M.
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorShi, Xiaoping
dc.contributor.authorRothschild, Aude
dc.contributor.authorSchaekers, Marc
dc.date.accessioned2021-10-16T01:03:40Z
dc.date.available2021-10-16T01:03:40Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10269
dc.sourceIIOimport
dc.titlePlasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics
dc.typeJournal article
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.source.peerreviewno
dc.source.beginpage172903-1
dc.source.endpage172903-3
dc.source.journalApplied Physics Letters
dc.source.issue17
dc.source.volume86
imec.availabilityPublished - imec


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