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Substrate removal of AlGaN/GaN HEMTs using laser lift-off

dc.contributor.authorDas, Johan
dc.contributor.authorRuythooren, Wouter
dc.contributor.authorVandersmissen, Raf
dc.contributor.authorDerluyn, Joff
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T01:05:17Z
dc.date.available2021-10-16T01:05:17Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10281
dc.sourceIIOimport
dc.titleSubstrate removal of AlGaN/GaN HEMTs using laser lift-off
dc.typeJournal article
dc.contributor.imecauthorRuythooren, Wouter
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage2655
dc.source.endpage2658
dc.source.journalPhysica Status Solidi C
dc.source.issue7
dc.source.volume2
imec.availabilityPublished - imec
imec.internalnotespaper from the Int. Workshop on Nitride Semiconductors; July 2004; Pittsburgh


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