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Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities

dc.contributor.authorDavid, Marie-Laure
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorNeimash, V.
dc.contributor.authorKras'ko, M.
dc.contributor.authorKraitchinskii, A.
dc.contributor.authorVoytovych, V.
dc.contributor.authorKabaldin, A.
dc.contributor.authorBarbot, J.F.
dc.date.accessioned2021-10-16T01:06:09Z
dc.date.available2021-10-16T01:06:09Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10287
dc.sourceIIOimport
dc.titleElectrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpageS2255
dc.source.endpageS2266
dc.source.journalJournal of Physics: Condensed Matter
dc.source.issue22
dc.source.volume17
imec.availabilityPublished - imec
imec.internalnotesSpecial issue containing articles presented at the 1st Int. Workshop: Coordination Action on Defects Relevant to Engineering Silicon-Based Devices (Catania, Sept. 2004)


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