Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiNx films and silicon substrate surface roughness on surface passivation
| dc.contributor.author | De Wolf, Stefaan | |
| dc.contributor.author | Agostinelli, Guido | |
| dc.contributor.author | Beaucarne, Guy | |
| dc.contributor.author | Vitanov, P. | |
| dc.date.accessioned | 2021-10-16T01:14:22Z | |
| dc.date.available | 2021-10-16T01:14:22Z | |
| dc.date.issued | 2005 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/10340 | |
| dc.source | IIOimport | |
| dc.title | Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiNx films and silicon substrate surface roughness on surface passivation | |
| dc.type | Journal article | |
| dc.source.peerreview | no | |
| dc.source.beginpage | 063303-1 | |
| dc.source.endpage | 063303-8 | |
| dc.source.journal | Journal of Applied Physics | |
| dc.source.issue | 6 | |
| dc.source.volume | 97 | |
| imec.availability | Published - imec |
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