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On the trap generation rate in ultrathin SiON under constant voltage stress

dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-16T01:17:12Z
dc.date.available2021-10-16T01:17:12Z
dc.date.issued2005-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10358
dc.sourceIIOimport
dc.titleOn the trap generation rate in ultrathin SiON under constant voltage stress
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.source.peerreviewno
dc.source.beginpage440
dc.source.endpage443
dc.source.journalMicroelectronic Engineering
imec.availabilityPublished - imec
imec.internalnotesPaper from the 14th biennial Conference on Insulating Films on Semiconductors, Leuven, June 2005


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