Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 layer
dc.contributor.author | Derluyn, Joff | |
dc.contributor.author | Boeykens, Steven | |
dc.contributor.author | Cheng, Kai | |
dc.contributor.author | Vandersmissen, Raf | |
dc.contributor.author | Das, Johan | |
dc.contributor.author | Ruythooren, Wouter | |
dc.contributor.author | Degroote, Stefan | |
dc.contributor.author | Leys, Maarten | |
dc.contributor.author | Germain, Marianne | |
dc.contributor.author | Borghs, Gustaaf | |
dc.date.accessioned | 2021-10-16T01:20:18Z | |
dc.date.available | 2021-10-16T01:20:18Z | |
dc.date.issued | 2005-09 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/10376 | |
dc.source | IIOimport | |
dc.title | Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 layer | |
dc.type | Journal article | |
dc.contributor.imecauthor | Ruythooren, Wouter | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.source.peerreview | no | |
dc.source.beginpage | 054501-1 | |
dc.source.endpage | 054501-5 | |
dc.source.journal | Journal of Applied Physics | |
dc.source.issue | 5 | |
dc.source.volume | 98 | |
imec.availability | Published - imec |
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