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HfO2 high-k gate dielectrics on Ge(100) by atomic oxygen beam deposition

dc.contributor.authordimoulas, A.
dc.contributor.authorMavrou, G.
dc.contributor.authorVellianitis, G.
dc.contributor.authorEvangelou, E.
dc.contributor.authorBoukos, N.
dc.contributor.authorHoussa, Michel
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-16T01:22:45Z
dc.date.available2021-10-16T01:22:45Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10390
dc.sourceIIOimport
dc.titleHfO2 high-k gate dielectrics on Ge(100) by atomic oxygen beam deposition
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.beginpage32908
dc.source.journalApplied Physics Letters
dc.source.issue3
dc.source.volume86
imec.availabilityPublished - imec


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