dc.contributor.author | Eneman, Geert | |
dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | Delhougne, Romain | |
dc.contributor.author | Verheyen, Peter | |
dc.contributor.author | Loo, Roger | |
dc.contributor.author | De Meyer, Kristin | |
dc.date.accessioned | 2021-10-16T01:29:48Z | |
dc.date.available | 2021-10-16T01:29:48Z | |
dc.date.issued | 2005-11 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/10428 | |
dc.source | IIOimport | |
dc.title | Influence of dislocations in strained Si/relaxed SiGe layers on n/p-junctions in a metal-oxide-semiconductor field-effect transistor technology | |
dc.type | Journal article | |
dc.contributor.imecauthor | Eneman, Geert | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.imecauthor | Delhougne, Romain | |
dc.contributor.imecauthor | Verheyen, Peter | |
dc.contributor.imecauthor | Loo, Roger | |
dc.contributor.imecauthor | De Meyer, Kristin | |
dc.contributor.orcidimec | Eneman, Geert::0000-0002-5849-3384 | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
dc.source.peerreview | no | |
dc.source.beginpage | 192112-1 | |
dc.source.endpage | 192112-3 | |
dc.source.journal | Applied Physics Letters | |
dc.source.issue | 19 | |
dc.source.volume | 87 | |
imec.availability | Published - imec | |