State coupling effects in GaAs/InGaAs/AlGaAs modulation doped quantum wells
dc.contributor.author | Abbade, M. L. F. | |
dc.contributor.author | Iikawa, F. | |
dc.contributor.author | Brum, J. A. | |
dc.contributor.author | Tröster, T. | |
dc.contributor.author | Bernussi, A. A. | |
dc.contributor.author | Pereira, Ricardo | |
dc.contributor.author | Borghs, Gustaaf | |
dc.date.accessioned | 2021-09-29T14:15:54Z | |
dc.date.available | 2021-09-29T14:15:54Z | |
dc.date.issued | 1996 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/1048 | |
dc.source | IIOimport | |
dc.title | State coupling effects in GaAs/InGaAs/AlGaAs modulation doped quantum wells | |
dc.type | Journal article | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 1925 | |
dc.source.endpage | 1927 | |
dc.source.journal | Journal of Applied Physics | |
dc.source.issue | 3 | |
dc.source.volume | 80 | |
imec.availability | Published - open access |