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Effect of high-temperature electron irradiation in thin gate oxide FD-SOI n-MOSFETs

dc.contributor.authorHayama, K.
dc.contributor.authorTakakura, K.
dc.contributor.authorOhyama, H.
dc.contributor.authorRafi, J.M.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T01:55:28Z
dc.date.available2021-10-16T01:55:28Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10551
dc.sourceIIOimport
dc.titleEffect of high-temperature electron irradiation in thin gate oxide FD-SOI n-MOSFETs
dc.typeJournal article
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage2392
dc.source.endpage2397
dc.source.journalIEEE Trans. Nuclear Science
dc.source.issue6, Part 1
dc.source.volume52
imec.availabilityPublished - imec
imec.internalnotesPaper from the Nuclear and Space Radiation Effects Conference - NSREC; July 2005; Seattle, WA, USA


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