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Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation

dc.contributor.authorHayama, K.
dc.contributor.authorTakakura, K.
dc.contributor.authorOhyama, H.
dc.contributor.authorRafi, J.M.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T01:55:55Z
dc.date.available2021-10-16T01:55:55Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10553
dc.sourceIIOimport
dc.titleBody potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation
dc.typeJournal article
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage459
dc.source.endpage462
dc.source.journalJournal of Materials Science: Materials in Electronics
dc.source.issue7
dc.source.volume16
imec.availabilityPublished - imec


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