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dc.contributor.authorHogg, S.M.
dc.contributor.authorPipeleers, B.
dc.contributor.authorVantomme, Andre
dc.contributor.authorBender, Hugo
dc.contributor.authorRichard, Olivier
dc.contributor.authorSwart, M.
dc.date.accessioned2021-10-16T02:07:31Z
dc.date.available2021-10-16T02:07:31Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10600
dc.sourceIIOimport
dc.titleDose dependent phenomena arising from implantation of Er into Si
dc.typeJournal article
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorRichard, Olivier
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewyes
dc.source.beginpage083514-1
dc.source.endpage083514-8
dc.source.journalJ. Applied Physics
dc.source.issue8
dc.source.volume97
imec.availabilityPublished - imec


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