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The lower boundary of the hydrogen concentration required for enhancing oxygen diffusion and thermal donor formation in Czochralski silicon

dc.contributor.authorHuang, Y.L.
dc.contributor.authorMa, Y.
dc.contributor.authorJob, R.
dc.contributor.authorFahrner, W.R.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T02:12:28Z
dc.date.available2021-10-16T02:12:28Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10620
dc.sourceIIOimport
dc.titleThe lower boundary of the hydrogen concentration required for enhancing oxygen diffusion and thermal donor formation in Czochralski silicon
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage033511-1
dc.source.endpage033511-4
dc.source.journalJournal of Applied Physics
dc.source.issue3
dc.source.volume98
imec.availabilityPublished - imec


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