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Interpretation of TOF-SIMS depth profiles from ultrashallow high-k dielectric stacks assisted by hybrid collisional computer simulation

dc.contributor.authorIgnatova, V.A.
dc.contributor.authorMöller, W.
dc.contributor.authorConard, Thierry
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorGijbels, R.
dc.date.accessioned2021-10-16T02:15:35Z
dc.date.available2021-10-16T02:15:35Z
dc.date.issued2005-02
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10632
dc.sourceIIOimport
dc.titleInterpretation of TOF-SIMS depth profiles from ultrashallow high-k dielectric stacks assisted by hybrid collisional computer simulation
dc.typeJournal article
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.beginpage71
dc.source.endpage77
dc.source.journalApplied Physics A
dc.source.issue1
dc.source.volume81
imec.availabilityPublished - imec


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