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Accurate effective mobility extraction by split C-V technique in SOI MOSFETs: suppression of the influence of floating-body effects

dc.contributor.authorKilchytska, Valeriya
dc.contributor.authorLederer, Dimitri
dc.contributor.authorCollaert, Nadine
dc.contributor.authorJean-Pierre, Raskin
dc.contributor.authorFlandre, Denis
dc.date.accessioned2021-10-16T02:31:45Z
dc.date.available2021-10-16T02:31:45Z
dc.date.issued2005-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10695
dc.sourceIIOimport
dc.titleAccurate effective mobility extraction by split C-V technique in SOI MOSFETs: suppression of the influence of floating-body effects
dc.typeJournal article
dc.contributor.imecauthorLederer, Dimitri
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.beginpage749
dc.source.endpage751
dc.source.journalIEEE Electron Device Letters
dc.source.issue10
dc.source.volume26
imec.availabilityPublished - imec


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