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FinFET analogue characterization from DC to 110 GHz

dc.contributor.authorLederer, Dimitri
dc.contributor.authorKilchytska, V.
dc.contributor.authorRudenko, T.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorFlandre, D.
dc.contributor.authorDixit, Abhisek
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorRaskin, J.P.
dc.date.accessioned2021-10-16T02:49:58Z
dc.date.available2021-10-16T02:49:58Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10761
dc.sourceIIOimport
dc.titleFinFET analogue characterization from DC to 110 GHz
dc.typeJournal article
dc.contributor.imecauthorLederer, Dimitri
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.beginpage1488
dc.source.endpage1496
dc.source.journalSolid-State Electronics
dc.source.issue5
dc.source.volume49
imec.availabilityPublished - imec
imec.internalnotesPaper selected from the EUROSOI Workshop; Granada; 19-21 January 2005


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