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GSMBE growth of GaInAsP/InP 1.3 mm-TM-lasers for monolithic integration with optical waveguide isolator

dc.contributor.authorLelarge, Frank
dc.contributor.authorDagens, B.
dc.contributor.authorCuisin, C.
dc.contributor.authorLe Gouezigou, O.
dc.contributor.authorPatriarche, G.
dc.contributor.authorVan Parys, Wouter
dc.contributor.authorVanwolleghem, Mathias
dc.contributor.authorBaets, Roel
dc.contributor.authorGentner, J.L.
dc.date.accessioned2021-10-16T02:50:34Z
dc.date.available2021-10-16T02:50:34Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10763
dc.sourceIIOimport
dc.titleGSMBE growth of GaInAsP/InP 1.3 mm-TM-lasers for monolithic integration with optical waveguide isolator
dc.typeJournal article
dc.contributor.imecauthorBaets, Roel
dc.contributor.orcidimecBaets, Roel::0000-0003-1266-1319
dc.source.peerreviewno
dc.source.beginpage709
dc.source.endpage713
dc.source.journalJournal of Crystal Growth
dc.source.issue1_4
dc.source.volume278
imec.availabilityPublished - imec


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