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The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes

dc.contributor.authorLeroy, W.P.
dc.contributor.authorOpsomer, Karl
dc.contributor.authorForment, S.
dc.contributor.authorVan Meirhaeghe, R.L.
dc.date.accessioned2021-10-16T02:52:10Z
dc.date.available2021-10-16T02:52:10Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10769
dc.sourceIIOimport
dc.titleThe barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes
dc.typeJournal article
dc.contributor.imecauthorOpsomer, Karl
dc.source.peerreviewno
dc.source.beginpage878
dc.source.endpage883
dc.source.journalSolid-State Electronics
dc.source.issue6
dc.source.volume49
imec.availabilityPublished - imec


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