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Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance

dc.contributor.authorLujan, Guilherme
dc.contributor.authorMagnus, Wim
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-16T03:04:23Z
dc.date.available2021-10-16T03:04:23Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10807
dc.sourceIIOimport
dc.titleModelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance
dc.typeJournal article
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage794
dc.source.endpage797
dc.source.journalMicroelectronics Reliability
dc.source.issue5_6
dc.source.volume45
imec.availabilityPublished - imec


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