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Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance

dc.contributor.authorO'Connor, R.
dc.contributor.authorHughes, G.
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.date.accessioned2021-10-16T03:43:36Z
dc.date.available2021-10-16T03:43:36Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10946
dc.sourceIIOimport
dc.titleProgressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewno
dc.source.beginpage869
dc.source.endpage874
dc.source.journalMicroelectronics Reliability
dc.source.issue5_6
dc.source.volume45
imec.availabilityPublished - imec
imec.internalnotes13th Workshop on Dielectrics in Microelectronics


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