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Reliability of HfSiON gate dielectrics

dc.contributor.authorO'Connor, Robert
dc.contributor.authorHughes, Greg
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorKauerauf, Thomas
dc.date.accessioned2021-10-16T03:44:10Z
dc.date.available2021-10-16T03:44:10Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10948
dc.sourceIIOimport
dc.titleReliability of HfSiON gate dielectrics
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewno
dc.source.beginpage68
dc.source.endpage71
dc.source.journalSemiconductor Science and Technology
dc.source.volume20
imec.availabilityPublished - imec


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