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Valence-band electron-tunneling measurement of the gate work function: application to the high-k / polycrystalline-silicon interface

dc.contributor.authorPantisano, Luigi
dc.contributor.authorAfanas'ev, Valeri
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorChen, Pei Jun
dc.date.accessioned2021-10-16T03:52:21Z
dc.date.available2021-10-16T03:52:21Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10976
dc.sourceIIOimport
dc.titleValence-band electron-tunneling measurement of the gate work function: application to the high-k / polycrystalline-silicon interface
dc.typeJournal article
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewno
dc.source.beginpage53712
dc.source.journalJournal of Applied Physics
dc.source.issue5
dc.source.volume98
imec.availabilityPublished - imec


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