Show simple item record

A comprehensive study of boron and carbon diffusion models in SiGeC heterojunction bipolar transistors

dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-16T05:02:49Z
dc.date.available2021-10-16T05:02:49Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11202
dc.sourceIIOimport
dc.titleA comprehensive study of boron and carbon diffusion models in SiGeC heterojunction bipolar transistors
dc.typeJournal article
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.beginpage063530-1
dc.source.endpage063530-9
dc.source.journalJournal of Applied Physics
dc.source.issue6
dc.source.volume98
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record