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Impact of high-K gate stack material with metal gates on LF noise in n- and p MOSFETs

dc.contributor.authorSrinivasan, Purushothaman
dc.contributor.authorSimoen, Eddy
dc.contributor.authorPantisano, Luigi
dc.contributor.authorClaeys, Cor
dc.contributor.authorMisra, D.
dc.date.accessioned2021-10-16T05:22:34Z
dc.date.available2021-10-16T05:22:34Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11262
dc.sourceIIOimport
dc.titleImpact of high-K gate stack material with metal gates on LF noise in n- and p MOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage226
dc.source.endpage229
dc.source.journalMicroelectronic Engineering
dc.source.volume80
imec.availabilityPublished - open access
imec.internalnotesPaper from the 14th biennial Conference on Insulating Films on Semiconductors, Leuven, June 2005


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