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The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN

dc.contributor.authorVan Daele, Benny
dc.contributor.authorVan Tendeloo, Gustaaf
dc.contributor.authorRuythooren, Wouter
dc.contributor.authorDerluyn, Joff
dc.contributor.authorLeys, Maarten
dc.contributor.authorGermain, Marianne
dc.date.accessioned2021-10-16T05:57:04Z
dc.date.available2021-10-16T05:57:04Z
dc.date.issued2005-08
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11359
dc.sourceIIOimport
dc.titleThe role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN
dc.typeJournal article
dc.contributor.imecauthorRuythooren, Wouter
dc.source.peerreviewno
dc.source.beginpage061905-1
dc.source.endpage061905-3
dc.source.journalApplied Physics Letters
dc.source.issue6
dc.source.volume87
imec.availabilityPublished - imec


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