Depth profiling of B through silicide on silicon structures, using secondary ion-mass spectrometry and resonant postionization mass spectrometry

dc.contributor.author	De Bisschop, Peter
dc.contributor.author	Gomez, J.
dc.contributor.author	Geenen, Luc
dc.contributor.author	Vandervorst, Wilfried
dc.date.accessioned	2021-09-29T14:21:10Z
dc.date.available	2021-09-29T14:21:10Z
dc.date.issued	1996
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/1147
dc.source	IIOimport
dc.title	Depth profiling of B through silicide on silicon structures, using secondary ion-mass spectrometry and resonant postionization mass spectrometry
dc.type	Journal article
dc.contributor.imecauthor	De Bisschop, Peter
dc.contributor.imecauthor	Vandervorst, Wilfried
dc.date.embargo	9999-12-31
dc.source.peerreview	no
dc.source.beginpage	311
dc.source.endpage	323
dc.source.journal	J. Vacuum Science and Technology B
dc.source.issue	1
dc.source.volume	14
imec.availability	Published - open access
imec.internalnotes	Paper from the 3rd International workshop on the measurement and characterisation of ultra-shallow dopant profiles in semiconductors. Research Triangle Park, North Carolina, USA. March 1995.