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First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

dc.contributor.authorWerquin, M.
dc.contributor.authorVellas, N.
dc.contributor.authorGuhel, Y.
dc.contributor.authorDucatteau, D.
dc.contributor.authorBoudart, B.
dc.contributor.authorPesant, J.C.
dc.contributor.authorBougrioua, Z.
dc.contributor.authorGermain, Marianne
dc.contributor.authorde Jaeger, J.C.
dc.contributor.authorGaquiere, C.
dc.date.accessioned2021-10-16T07:07:05Z
dc.date.available2021-10-16T07:07:05Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11553
dc.sourceIIOimport
dc.titleFirst results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology
dc.typeJournal article
dc.source.peerreviewno
dc.source.beginpage311
dc.source.endpage315
dc.source.journalMicrowave and Optical Technology Letters
dc.source.issue4
dc.source.volume46
imec.availabilityPublished - imec


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