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High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

dc.contributor.authorWerquin, W.
dc.contributor.authorGaquiere, C.
dc.contributor.authorGuhel, Y.
dc.contributor.authorVellas, N.
dc.contributor.authorTheron, D.
dc.contributor.authorBoudart, B.
dc.contributor.authorHoel, V.
dc.contributor.authorGermain, Marianne
dc.contributor.authorde Jaeger, J.C.
dc.contributor.authorDelage, S.
dc.date.accessioned2021-10-16T07:07:29Z
dc.date.available2021-10-16T07:07:29Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11554
dc.sourceIIOimport
dc.titleHigh power and linearity performances of gallium nitride HEMT devices on sapphire substrate
dc.typeJournal article
dc.source.peerreviewno
dc.source.beginpage46
dc.source.endpage47
dc.source.journalElectronics Letters
dc.source.issue1
dc.source.volume41
imec.availabilityPublished - imec


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