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A complementary high-voltage technology based on n-type CdSe:In and p-type Ge:Cu thin film transistors

dc.contributor.authorDe Cubber, A. M.
dc.contributor.authorDe Smet, Herbert
dc.contributor.authorDe Vos, Joeri
dc.contributor.authorCarchon, Nadine
dc.contributor.authorVan Calster, Andre
dc.date.accessioned2021-09-29T14:22:15Z
dc.date.available2021-09-29T14:22:15Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1158
dc.sourceIIOimport
dc.titleA complementary high-voltage technology based on n-type CdSe:In and p-type Ge:Cu thin film transistors
dc.typeJournal article
dc.contributor.imecauthorDe Smet, Herbert
dc.contributor.imecauthorDe Vos, Joeri
dc.contributor.imecauthorCarchon, Nadine
dc.contributor.imecauthorVan Calster, Andre
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage581
dc.source.endpage583
dc.source.journalIEEE Electron Device Letters
dc.source.issue12
dc.source.volume17
imec.availabilityPublished - open access


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